Automakers can build safer, more efficient and more reliable silicon carbide (SiC)- and insulated-gate bipolar transistor (IGBT)-based traction inverters by designing with UCC5880-Q1, featuring real-time variable gate-drive strength, Serial Peripheral Interface (SPI), advanced SiC monitoring and protection, and diagnostics for functional safety. The new UCC5880-Q1 reinforced isolated gate driver offers features that enable EV powertrain engineers to increase power density and reduce system design complexity and cost while achieving their safety and performance goals.Īs EVs continue to grow in popularity, semiconductor innovations in traction inverter systems are helping overcome critical barriers to widespread adoption. (TI) has launched a highly integrated, functional safety-compliant, isolated gate driver that enables engineers to design more efficient traction inverters and maximize electric vehicle (EV) driving range. Symbol fixes (p-types) according to defines in IEC EN 60617-5.TI's UCC5880-Q1 enable EV powertrain engineers to increase power density and reduce system design complexity and cost while achieving their safety and performance goals. Test with matrix-tranformation replaced by rotate-transformation for the two rotated text lines (due to missing rotation in some thumbnail png-images) Reverted to version as of 15:48, 6 June 2010 bad result of svg-to-png thumbnail creation Reverted to version as of 15:48, 6 June 2010 bad result of svg-to-png thumbnail creation - second try to get the previous state of this image Click on a date/time to view the file as it appeared at that time.
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